PECVD
Plasma Enhanced CVD
PECVD 공정 소개
PECVD(Plasma Enhanced CVD)는 LPCVD가 못 다루는 온도 영역을 채우는 박막 증착 공정입니다. 기판 온도를 200~400°C로 낮춰도 플라즈마가 전구체를 활성화해주기 때문에, 이미 금속 배선이 깔린 웨이퍼 위에도 SiO₂·SiN을 올릴 수 있습니다. 단점은 막 안에 수소가 갇히고 밀도가 떨어진다는 점 — 이 시뮬레이터는 기판 온도를 올리면 수소 함량은 줄어드는 대신 thermal budget이 늘어나는 트레이드오프를 직접 손으로 만져볼 수 있게 했습니다.
Overview
Study how substrate temperature affects PECVD SiO₂ film quality. Explore the relationship between deposition temperature, hydrogen content, and film density for various application requirements.
What it demonstrates
- Temperature vs. film quality trade-off
- Hydrogen content control
- Film density optimization
Interactive Demo: Temperature Effect on Film Quality
Explore how substrate temperature affects PECVD SiO₂ film properties. Observe the trade-off between hydrogen content, film density, and thermal budget.
Mission: Temperature Effect
Adjust substrate temperature and observe how it affects hydrogen content and film density.
Film Properties
• Good film density
• Quality and thermal budget balanced
Understanding Temperature Effects in PECVD SiO₂
Why Does Temperature Matter?
PECVD films contain hydrogen (H) from the SiH₄ precursor. At low temperatures, not all H is removed, leaving Si-H and Si-OH bonds in the film. Higher temperatures promote H desorption and denser, more stoichiometric SiO₂.
Hydrogen Problem
Excess hydrogen in PECVD oxide can cause problems:
- Bubbles during high-temp annealing (H₂ outgassing)
- Lower breakdown voltage (porous film)
- Higher etch rate in HF solutions
Temperature Trade-offs
For temperature-sensitive devices
H: 18-25%
Good quality/thermal balance
H: 10-15%
Near thermal oxide quality
H: 5-8%
More advanced simulations including gas ratio optimization and multi-layer deposition are available under institutional access.
Access this module
This module is available under an institutional education license. Request access for your organization.